sd101aws-g, sd101bws-g, SD101CWS-G www.vishay.com vishay semiconductors rev. 1.2, 14-oct-16 1 document number: 85162 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 small signal schottky diodes mechanical data case: sod-323 weight: approx. 4.0 mg packaging codes/options: 18/10k per 13" reel (8 mm tape), 10k/box 08/3k per 7" reel (8 mm tape), 15k/box features ? for general purpose applications ? the sd101 series is a metal-on-silicon schottky barrier device which is protected by a pn junction guardring ? the low forward voltage drop and fast switching make it ideal for protec tion of mos devices, steering, biasing and coupling diodes for fast switching and low logic level applications ? aec-q101 qualified available ? (part number on request) ? base p/n-g3 - green, commercial grade ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 ? note (1) valid provided that electrodes are kept at ambient temperature note (1) valid provided that electrodes are kept at ambient tamperature parts table part ordering code internal construction type marking remarks sd101aws-g sd101aws-g3-08 or sd101aws-g3-18 single diode sk tape and reel sd101bws-g sd101bws-g3-08 or sd 101bws-g3-18 single diode sl SD101CWS-G SD101CWS-G3-08 or sd 101cws-g3-18 single diode sm absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition part symbol value unit repetitive peak reverse voltage sd101aws-g v rrm 60 v sd101bws-g v rrm 50 v SD101CWS-G v rrm 40 v power dissipati on (infinite heatsink) (1) p tot 150 mw forward continuous current i f 30 ma maximum single cycle surge 10 s square wave i fsm 2a thermal characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit thermal resistance junction to ambient air (1) r thja 650 k/w junction temperature (1) t j 125 c operating temperature range t op -55 to +125 c storage temperature range t stg -65 to +150 c
sd101aws-g, sd101bws-g, SD101CWS-G www.vishay.com vishay semiconductors rev. 1.2, 14-oct-16 2 document number: 85162 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - typical variation of forward current vs. forward voltage fig. 2 - typical forward conduction curve fig. 3 - typical variation of reverse current at various temperatures fig. 4 - typical capacitance curve as a function of reverse voltage electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition p art symbol min. typ. max. unit reverse breakdown voltage i r = 10 a sd101aws-g v (br) 60 v sd101bws-g v (br) 50 v SD101CWS-G v (br) 40 v leakage current v r = 50 v sd101aws-g i r 200 na v r = 40 v sd101bws-g i r 200 na v r = 30 v SD101CWS-G i r 200 na forward voltage drop i f = 1 ma sd101aws-g v f 410 mv sd101bws-g v f 400 mv SD101CWS-G v f 390 mv i f = 15 ma sd101aws-g v f 1000 mv sd101bws-g v f 950 mv SD101CWS-G v f 900 mv junction capacitance v r = 0 v, f = 1 mhz sd101aws-g c d 2.0 ns sd101bws-g c d 2.1 ns SD101CWS-G c d 2.2 ns reverse recovery time i f = i r = 5 ma, recover to 0.1 i r t rr 1ns 0.01 0.1 1 10 0 0.4 0.6 0.8 1.0 0.2 a b c i - forward current (ma) f v f - forward voltage (v) 18477 a b c 0 0.4 0.6 0.8 1.0 0.2 60 20 80 40 0 100 i - forward current (ma) f v f - forward voltage (v) 18478 100 10 1 0.1 0.01 10 20 30 40 050 75 c 50 c 25 c 125 c 100 c v r - reverse voltage (v) i - reverse current (a) r 18479 18480 10 20 30 40 0 0 1.0 1.2 1.4 1.6 1.8 2.0 0.6 0.8 0.2 0.4 50 t j = 25 c c b a c - typical capacitance (pf) d v r - reverse voltage (v)
sd101aws-g, sd101bws-g, SD101CWS-G www.vishay.com vishay semiconductors rev. 1.2, 14-oct-16 3 document number: 85162 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters (inches): sod-323 rev. 6 - date: 23. s ept.2016 17443 document no.: s 8-v-3910.02-001 (4) created - date: 24.augu s t.2004 footprint recommendation: 0.6 [0.024] 1.1 [0.043] 1.5 [0.059] 2.50 [0.098] 2.85 [0.112] 1.60 [0.063] 1.95 [0.077] 0 - 8 0.25 [0.010] 0.40 [0.016] cathode bar 0.20 [0.008] 0.40 [0.016] 0.8 [0.031] 0.2 [0.008] 1.15 [0.045] 0.10 [0.004] 0.1 [0.004] max. 0.15 [0.006] 1.6 [0.063] 0.8 [0.031] 0.8 [0.031]
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